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 Common Cathode Fast Recovery Epitaxial Diode (FRED)
DSEK 60
IFAVM = 2x 30 A VRRM = 600 V trr = 35 ns
VRSM V 640
VRRM V 600
Type
TO-247 AD
A C A
DSEK 60-06A
A
C
A
C (TAB)
A = Anode, C = Cathode, TAB = Cathode
Symbol IFRMS IFAVM yyx IFRM IFSM
Test Conditions TVJ = TVJM TC = 85C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Maximum Ratings 50 30 375 300 320 260 280 450 420 340 320 -40...+150 150 -40...+150 A A A A A A A A2s A2s A2s A2s C C C W Nm g
Features
q
q q q q
TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
q q
International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behavior Epoxy meets UL 94V-0
TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ TVJM Tstg Ptot Md Weight TC = 25C Mounting torque
Applications
q
q q
125 0.8...1.2 6
Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders
Advantages
q q
Symbol
Test Conditions
Characteristic Values typ. max. 100 50 7 1.4 1.6 1.01 7.1 1 0.25 70 mA mA mA V V V mW K/W K/W K/W ns A
q
IR
TVJ = 25C TVJ = 25C TVJ = 125C IF = 37 A;
VR = VRRM VR = 0.8 * VRRM VR = 0.8 * VRRM TVJ = 150C TVJ = 25C
q q
High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Operating at lower temperature or space saving by reduced cooling
VF VT0 rT RthJC RthCK RthJA trr IRM
For power-loss calculations only TVJ = TVJM
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V; TVJ = 25C VR = 350 V; IF = 30 A; -diF/dt = 240 A/ms L 0.05 mH; TVJ = 100C
35 10
50 11
x IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions
(c) 2000 IXYS All rights reserved
1-2
036
DSEK 60, 600 V
Fig. 1 Forward current versus voltage drop.
Fig. 2 Recovery charge versus -diF/dt.
Fig. 3 Peak reverse current versus -diF/dt.
Fig. 4 Dynamic parameters versus junction temperature.
Fig. 5 Recovery time versus -diF/dt.
Fig. 6 Peak forward voltage versus diF/dt.
Dim. A B C D E F G H J K Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 2.2 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.54 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102
Dimensions
M N
L M N
Fig. 7 Transient thermal impedance junction to case.
(c) 2000 IXYS All rights reserved
2-2


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